Infineon IRFR4615TRLPBF: Datasheet, Application Circuit, and Replacement Part Guide

The Infineon IRFR4615TRLPBF is a robust N-channel power MOSFET that has established itself as a reliable workhorse in power management and switching applications. Designed using advanced process technology, this component is renowned for its low on-state resistance (RDS(on)) and high current handling capability, making it an efficient choice for a wide array of electronic designs.

Datasheet Overview and Key Specifications

A thorough review of the IRFR4615TRLPBF datasheet reveals its core electrical characteristics, which are critical for circuit design. This MOSFET is housed in a TO-252 (DPAK) package, offering a good balance between size and power dissipation. Its standout specifications include a drain-to-source voltage (VDS) of 150V and a continuous drain current (ID) of 18A at a case temperature of 25°C. The low RDS(on) of just 60mΩ (max) at VGS = 10 V is a key factor in minimizing conduction losses, leading to higher efficiency and reduced heat generation. Designers must also pay close attention to the gate threshold voltage (VGS(th)), which is typically 2V, and the total gate charge (QG), as these parameters are vital for designing the appropriate drive circuit.

Typical Application Circuit

A common application for the IRFR4615TRLPBF is in DC-DC switch-mode power supplies (SMPS), such as buck and boost converters. In a standard buck converter circuit, the MOSFET acts as the main switching element, controlled by a PWM signal from a dedicated driver IC.

The gate is driven by the PWM controller, typically through a small series resistor to dampen ringing and control rise times. A fast-recovery bootstrap diode and capacitor are often used to provide a voltage higher than the input supply to fully enhance the MOSFET gate, ensuring low RDS(on). A Schottky diode is placed in parallel with the inductor to provide a freewheeling current path when the MOSFET is off. The efficiency of this circuit is heavily dependent on the switching performance and low RDS(on) of the IRFR4615TRLPBF. Proper heatsinking is essential, especially when operating at high currents, to keep the junction temperature within safe limits.

Replacement Part Guide

While the IRFR4615TRLPBF is widely available, supply chain issues or design revisions may necessitate finding a suitable alternative. When selecting a replacement, it is crucial to match the key parameters to ensure compatibility and performance.

Key Parameters to Match: VDS (150V), ID (18A), RDS(on) (max 60mΩ), Package (TO-252), and Gate Threshold Voltage.

Direct Equivalents: Other manufacturers may produce pin-to-pin compatible parts. Checking distributor cross-reference lists is always recommended.

Recommended Alternatives:

Infineon IRFB4615PbF: A very similar part in a TO-220F package, offering higher power dissipation but requiring more board space.

STMicroelectronics STP18NK50ZFP: A 500V MOSFET with comparable current rating; suitable if higher voltage tolerance is needed.

ON Semiconductor FDPF18N50T: Another 500V alternative with low gate charge for fast switching.

Vishay SiHF18N50E: A 500V, 18A MOSFET that can serve as a functional replacement in many circuits.

Always simulate and test the circuit with the replacement component to validate thermal and electrical performance under real-world conditions.

ICGOODFIND Summary

The Infineon IRFR4615TRLPBF is a highly efficient 150V power MOSFET prized for its exceptionally low on-resistance, making it a top contender for power conversion and motor control tasks. Understanding its datasheet is key to leveraging its full potential, particularly in switch-mode power supply applications. When a replacement is required, careful cross-referencing of electrical characteristics and package type is essential for maintaining system integrity and performance.

Keywords: Power MOSFET, Low RDS(on), Switch-Mode Power Supply (SMPS), DC-DC Converter, TO-252 Package.