Infineon IRFR15N20DTRPBF: A Comprehensive Technical Overview of the 200V Power MOSFET
The Infineon IRFR15N20DTRPBF is a robust N-channel power MOSFET engineered to deliver high performance and reliability in a wide array of power conversion and switching applications. As part of Infineon's extensive portfolio, this component is designed to meet the demanding requirements of modern electronic systems, offering an optimal balance of efficiency, thermal management, and cost-effectiveness.
Housed in a compact and industry-standard D²PAK (TO-263) surface-mount package, this MOSFET is characterized by a 200V drain-source voltage (VDS) rating, making it exceptionally suitable for applications operating in intermediate voltage ranges. This includes switch-mode power supplies (SMPS), motor control circuits, DC-DC converters, and automotive systems. The package is designed for high power dissipation, allowing it to handle significant current levels while maintaining stable operation.
A key feature of this device is its very low on-state resistance (RDS(on)), typically measuring just 72mΩ at 10V gate drive. This low resistance is critical for minimizing conduction losses during operation. When a MOSFET is in its fully on state, it behaves like a small resistor; a lower RDS(on) directly translates to reduced power loss (I²R loss) and heat generation. This inherent efficiency is paramount for designing energy-conscious systems that require high output without excessive thermal buildup.
The component also boasts a low gate charge (Qg) and fast switching capabilities. These characteristics are essential for high-frequency switching applications. A lower gate charge means the device can be turned on and off more quickly with less drive energy, which reduces switching losses and improves overall system efficiency, especially in circuits operating at tens or hundreds of kilohertz.
Furthermore, the IRFR15N20DTRPBF is 100% avalanche tested, ensuring ruggedness and reliability under extreme operating conditions, such as inductive load switching where voltage spikes are common. This testing guarantees that the MOSFET can withstand a certain amount of unclamped inductive energy without being damaged, a vital feature for the robustness of the end product.
ICGOOODFIND: The Infineon IRFR15N20DTRPBF stands out as a highly efficient and reliable 200V power MOSFET. Its excellent combination of low RDS(on), fast switching speed, and avalanche ruggedness makes it an ideal choice for designers seeking to optimize performance in power management applications, from industrial equipment to consumer electronics.
Keywords: Power MOSFET, Low RDS(on), 200V Voltage Rating, Fast Switching, Avalanche Tested.
