Infineon IPB039N10N3 G5: A 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, Infineon Technologies has engineered the IPB039N10N3 G5, a 100V N-channel power MOSFET that stands as a paragon of performance within the esteemed OptiMOS™ 5 family. This device is specifically designed to minimize losses and maximize efficiency in a wide array of power conversion applications.

At the heart of this MOSFET's superior performance is its exceptionally low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 3.9 mΩ at 10 V, the IPB039N10N3 G5 drastically reduces conduction losses. This is complemented by an optimized gate charge (Q G), which ensures swift switching transitions, thereby minimizing switching losses. This dual-front attack on power loss is critical for applications operating at high frequencies, where efficiency gains are most significant.

The benefits of these technical achievements are realized in end-use performance. Designers can achieve higher power density by operating at increased switching frequencies without a proportional rise in heat generation, allowing for the use of smaller passive components. Furthermore, the lower power dissipation translates directly into reduced thermal management requirements, potentially simplifying heatsink design and lowering overall system cost and size.

Housed in an PQFN 3.3x3.3 mm package, this MOSFET offers an excellent compromise between compact size and thermal performance. The package's low parasitic inductance is crucial for clean and efficient high-speed switching, making it an ideal choice for space-constrained modern designs.

Typical applications that benefit from the IPB039N10N3 G5's characteristics include:

High-Frequency DC-DC Converters in telecom and server power supplies.

Motor Drive and Control Circuits for industrial automation and robotics.

Synchronous Rectification in switch-mode power supplies (SMPS).

Battery Management Systems (BMS) and protection circuits.

ICGOOODFIND: The Infineon IPB039N10N3 G5 is a benchmark 100V MOSFET that delivers an outstanding blend of ultra-low on-resistance and fast switching capability. It is a premier solution for engineers focused on pushing the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: OptiMOS 5, Low R DS(on), High-Efficiency, Power MOSFET, Synchronous Rectification.